29 citations · 93 across the 8 of their papers we have counts for
8 papers
Grain Boundary Resistance in Copper Interconnects from an Atomistic Model to a Neural Network
Daniel Valencia, Evan Wilson, Zhengping Jiang +3
Orientation effects on the resistivity of copper grain boundaries are studied systematically with two different atomistic tight binding methods. A methodology is developed to model…
Performance degradation of superlattice MOSFETs due to scattering in the contacts
Pengyu Long, Jun Huang, Zhengping Jiang +3
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec.…
NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law
Robert Andrawis, Jose David Bermeo, James Charles +12
Electronic performance predictions of modern nanotransistors require nonequilibrium Green's functions including incoherent scattering on phonons as well as inclusion of random allo…
Surface Passivation in Empirical Tight Binding
Yu He, Yaohua Tan, Zhengping Jiang +3
Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that expli…
Anisotropic strain in SmSe and SmTe: implications for electronic transport
Marcelo A. Kuroda, Zhengping Jiang, Michael Povolotskyi +3
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress indu…
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +4
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and th…
Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
Zhengping Jiang, Neerav Kharche, Timothy Boykin +1
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This wor…
Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers
Sunhee Lee, Hoon Ryu, Zhengping Jiang +1
Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum…