248 citations · 526 across the 20 of their papers we have counts for
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Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS
Nicholas Stephen, Ivan Pinto-Huguet, Robert Lawrence +8
Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and strai…
Issues related to the usage of nitrogen as carrier gas for the MOVPE growth of GaSb/InAs heterostructures on InAs pseudosubstrates
Hanno Kroencke, Agnieszka Gocalinska, Valeria Dimastrodonato +2
GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates (pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. We demonstrate that GaSb growth by nitr…
Unexpected aspects of strain relaxation and compensation in InGaAs metamorphic structures grown by MOVPE
A. Gocalinska, M. Manganaro, E. Pelucchi
We present a selection of stack designs for MOVPE grown InxGa1-xAs metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, sho…
Indium segregation during III-V quantum wire and quantum dot formation on patterned substrates
Stefano T. Moroni, Valeria Dimastrodonato, Tung-Hsun Chung +4
We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructure…
Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE
Agnieszka Gocalinska, Marina Manganaro, Valeria Dimastrodonato +1
We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic…
Unusual nanostructures of "lattice matched" InP on AlInAs
A. Gocalinska, M. Manganaro, G. Juska +6
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of…
Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
A. Gocalinska, M. Manganaro, D. D. VVedensky +1
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These fi…