32 citations · 142 across the 7 of their papers we have counts for
7 papers
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase
L. Gluba, O. Yastrubchak, J. Z. Domagala +6
The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification o…
Analysis of the and + optical transitions in (Ga,Mn)As epitaxial layers
L. Gluba, O. Yastrubchak, G. Sek +8
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indic…
Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
O. Yastrubchak, T. Andrearczyk, J. Z. Domagala +4
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties…
Electronic- and band-structure evolution in low-doped (Ga,Mn)As
O. Yastrubchak, J. Sadowski, H. Krzyzanowska +5
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasin…
InP nanocrystals on silicon for optoelectronic applications
Slawomir Prucnal, Shengqiang Zhou, Xin Ou +8
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices…
Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films
O. Yastrubchak, J. Zuk, H. Krzyzanowska +4
Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-te…