55 citations · 141 across the 6 of their papers we have counts for
6 papers
Perpendicular magnetic tunnel junctions with multi-interface free layer
Pravin Khanal, Bowei Zhou, Magda Andrade +8
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy…
On the Temperature-dependent Characteristics of Perpendicular Shape Anisotropy-Spin Transfer Torque-Magnetic Random Access Memories (PSA-STT-MRAMs)
Wei Zhang, Zihan Tong, Yuzan Xiong +2
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good the…
Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
Peng Li, Jinjun Ding, Steven S. -L. Zhang +13
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies,…
Kondo physics in antiferromagnetic Weyl semimetal Mn3+xSn1-x films
Durga Khadka, T. R. Thapaliya, Sebastian Hurtado Parra +9
Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date.…
Electrical control of metallic heavy-metal/ferromagnet interfacial states
Chong Bi, Congli Sun, Meng Xu +3
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semicond…
Measurement of specific contact resistivity using scanning voltage probes
Weigang Wang, Malcolm R. Beasley
Specific contact resistivity measurements have conventionally been heavy in both fabrication and simulation/calculation in order to account for complicated geometries and other eff…