activity
20102022
most citedSpin-orbit torque switching of synthetic antiferromagnets

97 citations · 279 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2022★ 21 cited

Perpendicular magnetic tunnel junctions with multi-interface free layer

Pravin Khanal, Bowei Zhou, Magda Andrade +8

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy…

cond-mat.mes-hall2021★ 7 cited

On the Temperature-dependent Characteristics of Perpendicular Shape Anisotropy-Spin Transfer Torque-Magnetic Random Access Memories (PSA-STT-MRAMs)

Wei Zhang, Zihan Tong, Yuzan Xiong +2

The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good the…

cond-mat.mtrl-sci2020★ 50 cited

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

Peng Li, Jinjun Ding, Steven S. -L. Zhang +13

A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies,…

cond-mat.mtrl-sci2020★ 55 cited

Kondo physics in antiferromagnetic Weyl semimetal Mn3+xSn1-x films

Durga Khadka, T. R. Thapaliya, Sebastian Hurtado Parra +9

Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date.…

cond-mat.mes-hall2017★ 1 cited

Electrical control of metallic heavy-metal/ferromagnet interfacial states

Chong Bi, Congli Sun, Meng Xu +3

Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semicond…

cond-mat.mes-hall2017★ 97 cited

Spin-orbit torque switching of synthetic antiferromagnets

Chong Bi, Hamid Almasi, Kyle Price +5

We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We sh…

cond-mat.mtrl-sci2013

Local sheet conductivity and sheet current density mapping using a single scanning voltage probe

Weigang Wang, Malcolm R. Beasley

We demonstrate how a single scanning voltage probe can be used to map the local conductivity and current density in a thin film with no a priori knowledge of the geometry of the el…

cond-mat.mtrl-sci2012★ 7 cited

Measurement of specific contact resistivity using scanning voltage probes

Weigang Wang, Malcolm R. Beasley

Specific contact resistivity measurements have conventionally been heavy in both fabrication and simulation/calculation in order to account for complicated geometries and other eff…

cond-mat.mes-hall2012★ 40 cited

Local transport measurements at mesoscopic length scales using scanning tunneling potentiometry

Weigang Wang, Ko Munakata, Michael Rozler +1

Under mesoscopic conditions, the transport potential on a thin film with current is theoretically expected to bear spatial variation due to quantum interference. Scanning tunneling…

cond-mat.mes-hall2010★ 1 cited

Theoretical Description of Scanning Tunneling Potentiometry

Weigang Wang, Malcolm R. Beasley

A theoretical description of scanning tunneling potentoimetry (STP) measurement is presented to address the increasing need for a basis to interpret experiments on macrscopic sampl…