31 citations · 41 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2013★ 31 cited
Evidence for hydrogen two-level systems in atomic layer deposition oxides
M. S. Khalil, M. J. A. Stoutimore, S. Gladchenko +10
Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic l…
cond-mat.mes-hall2012★ 10 cited
III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
J. J. Gu, X. W. Wang, J. Shao +4
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) archite…