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Roy G. Gordon

1 paper hereh-index 4159 citations4 works total

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

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  • cond-mat.mes-hall1

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most citedIII-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D

10 citations · 10 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2012★ 10 cited

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D

J. J. Gu, X. W. Wang, J. Shao +4

In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) archite…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.