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Zeeman Spin-Splitting in the (010) -Ga2O3 Two-Dimensional Electron Gas
Adam T. Neal, Yuewei Zhang, Said Elhamri +2
Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau level…
Donors and Deep Acceptors in -Ga2O3
Adam T. Neal, Shin Mou, Subrina Rafique +9
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in -Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples gr…
Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Adam T. Neal, Shin Mou, Roberto Lopez +4
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy st…
Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Adam T. Neal, Yuchen Du, Han Liu +1
We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in th…
The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Han Liu, Adam T. Neal, Mengwei Si +2
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-laye…
Phosphorene: A New 2D Material with High Carrier Mobility
Han Liu, Adam T. Neal, Zhen Zhu +2
Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamenta…