80 citations · 119 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2013★ 80 cited
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan +11
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on b…
cond-mat.mtrl-sci2012★ 39 cited
Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface
Handong Li, Lei Gao, Hui Li +4
The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi…