217 citations · 947 across the 12 of their papers we have counts for
5 papers · 1 filter
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson +11
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of…
Epitaxial Graphene Growth on SiC Wafers
D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Graphene formation on SiC substrates
Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…