188 citations · 316 across the 3 of their papers we have counts for
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Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states
Pavel G. Baranov, Victor A. Soltamov, Alexandra A. Soltamova +2
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can exte…
Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
D. Riedel, F. Fuchs, H. Kraus +7
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decad…
Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
Victor A. Soltamov, Alexandra A. Soltamova, Ivan I. Proskuryakov +1
We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies () in silicon carbide (SiC) at ro…