141 citations · 757 across the 24 of their papers we have counts for
9 papers · 1 filter
Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Hanno Küpers, Ryan B. Lewis, Pierre Corfdir +6
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal positio…
Electronic and magnetic properties of -FeGe films embedded in vertical spin valve devices
Dietmar Czubak, Samuel Gaucher, Lars Oppermann +5
We studied metastable -FeGe, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic FeSi and CoFeSi electrodes.…
Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…
Radial Stark effect in (In,Ga)N nanowires
Jonas Lähnemann, Pierre Corfdir, Felix Feix +5
We study the luminescence of unintentionally doped and Si-doped InGaN nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emis…
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Christian Hauswald, Pierre Corfdir, Johannes K. Zettler +9
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both…
Luminescence associated with stacking faults in GaN
Jonas Lähnemann, Uwe Jahn, Oliver Brandt +3
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matri…
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
Christian Hauswald, Timur Flissikowski, Tobias Gotschke +4
Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct dia…
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Benjamin Wilsch, Uwe Jahn, Bernd Jenichen +2
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray…
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Jonas Lähnemann, Oliver Brandt, Carsten Pfüller +7
We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated…