55 citations · 87 across the 3 of their papers we have counts for
4 papers
Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments
Ali AlHassan, Jonas Lähnemann, Arman Davtyan +8
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, wh…
Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities
Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller +3
We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN…
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Benjamin Wilsch, Uwe Jahn, Bernd Jenichen +2
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray…
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…