131 citations · 286 across the 10 of their papers we have counts for
10 papers
Molecular Beam Epitaxy of AlScN Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
Adriano Notarangelo, Rudeesun Songmuang, Mostafa Saleh +10
We study the molecular beam epitaxy of self-assembled AlScN nanowires on conductive TiN layers and demonstrate their application in piezoelectric na…
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Thomas Auzelle, Chiara Sinito, Jonas Lähnemann +5
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epi…
Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments
Ali AlHassan, Jonas Lähnemann, Arman Davtyan +8
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, wh…
Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities
Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller +3
We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN…
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…
Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
Benjamin Wilsch, Uwe Jahn, Bernd Jenichen +2
The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray…
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…
Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
Uwe Jahn, Jonas Lähnemann, Carsten Pfüller +6
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that opt…