131 citations · 864 across the 23 of their papers we have counts for
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Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations
Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld +5
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well a…
Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…
Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume
Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…