131 citations · 864 across the 23 of their papers we have counts for
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Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy
Jonas Lähnemann, Christian Hauswald, Martin Wölz +4
(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emi…
Luminescence associated with stacking faults in GaN
Jonas Lähnemann, Uwe Jahn, Oliver Brandt +3
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matri…
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
Oliver Brandt, Sergio Fernández-Garrido, Johannes K. Zettler +4
Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus form…