T. Hajiri

activity

20112024

most citedLarge-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer

153 citations · 497 across the 14 of their papers we have counts for

collaborators

Showing 2019Show all

3 papers · 1 filter

cond-mat.mtrl-sci2019★ 19 cited

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO $_{3}$

T Hajiri, L. Baldrati, R. Lebrun +10

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-c…

cond-mat.mtrl-sci2019★ 54 cited

Electrical current switching of the noncollinear antiferromagnet Mn $_{3}$ GaN

T. Hajiri, S. Ishino, K. Matsuura +1

We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn $_{3}$ GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated b…

cond-mat.str-el2019★ 44 cited

Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn $_{3}$ Ni $_{1 - x}$ Cu $_{x}$ N

K. Zhao, T. Hajiri, H. Chen +3

We report the anomalous Hall effect (AHE) in antiperovskite Mn $_{3}$ NiN with substantial doping of Cu on the Ni site (i.e. Mn $_{3}$ Ni $_{1 - x}$ Cu $_{x}$ N), which stabilizes a noncolli…

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3​

Electrical current switching of the noncollinear antiferromagnet Mn3​GaN

Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn3​Ni1−x​Cux​N

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO $_{3}$

Electrical current switching of the noncollinear antiferromagnet Mn $_{3}$ GaN

Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn $_{3}$ Ni $_{1 - x}$ Cu $_{x}$ N