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cond-mat.mtrl-sci2009★ 106 cited
Physical mechanisms of interface-mediated intervalley coupling in Si
A. L. Saraiva, M. J. Calderón, Xuedong Hu +2
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifte…
cond-mat.mtrl-sci2007★ 22 cited
Conduction band tight-binding description for silicon applied to phosphorous donors
A. S. Martins, Timothy B. Boykin, Gerhard Klimeck +1
A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented…