56 citations · 77 across the 5 of their papers we have counts for
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cond-mat.mes-hall2017★ 5 cited
Moderate bending strain induced semiconductor to metal transition in Si nanowires
M. Golam Rabbani, Sunil R. Patil, M. P. Anantram
Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1…
cond-mat.mes-hall2017★ 11 cited
Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
M. Golam Rabbani, Sunil R. Patil, Amit Verma +6
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for vis…