56 citations · 77 across the 5 of their papers we have counts for
5 papers
Moderate bending strain induced semiconductor to metal transition in Si nanowires
M. Golam Rabbani, Sunil R. Patil, M. P. Anantram
Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1…
Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
M. Golam Rabbani, Sunil R. Patil, Amit Verma +6
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for vis…
Simulation Study of Schottky Contact Based Single Si Wire Solar Cell
M. Golam Rabbani, Amit Verma, Reza Nekovei +2
We simulate single silicon nanowire (SiNW) solar cells with dissimilar work function metal contacts. Both short circuit current (ISC) and open circuit voltage (VOC) have been inves…
Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells
M. Golam Rabbani, Amit Verma, Michael M. Adachi +4
We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions…
Unified model for conductance through DNA with the Landauer-Buttiker formalism
Jianqing Qi, Neranjan Edirisinghe, M. Golam Rabbani +1
In this work, we model the zero-bias conductance for the four different DNA strands that were used in conductance measurement experiment [A. K. Mahapatro, K. J. Jeong, G. U. Lee, a…