4 papers · 1 filter
Strain effects on -type doping in AlN
Haochen Wang, Chris G. Van de Walle
Controllable doping in AlN and its alloys is essential for deep-ultraviolet light sources. Ionization energies for donors in AlN (, , $\mathrm{Se_N}…
Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Yizheng Liu, Haochen Wang, Carl Peterson +3
We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…
Towards higher electro-optic response in AlScN
Haochen Wang, Sai Mu, Chris G. Van de Walle
Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to…
Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN
Guangcanlan Yang, Haochen Wang, Sai Mu +7
Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in partic…