4 papers
Strain effects on -type doping in AlN
Haochen Wang, Chris G. Van de Walle
Controllable doping in AlN and its alloys is essential for deep-ultraviolet light sources. Ionization energies for donors in AlN (, , $\mathrm{Se_N}…
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…
Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Yizheng Liu, Haochen Wang, Carl Peterson +3
We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…
Emergent Kagome lattice and non-Abelian lattice gauge field of biexcitons in t-MoTe
Haochen Wang, Wang Yao
Non-Abelian gauge fields, characterized by their non-commutative symmetry groups, shape physical laws from the Standard Model to emergent topological matter for quantum computation…