activity
20102017
most citedOrigin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

219 citations · 612 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2017★ 86 cited

Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures

Zuhuang Chen, Zhanghui Chen, Z. Q. Liu +19

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglemen…

cond-mat.supr-con2015★ 51 cited

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

S. W. Zeng, Z. Huang, W. M. Lv +12

We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator tran…

cond-mat.mtrl-sci2014★ 27 cited

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

Z. Q. Liu, L. Sun, Z. Huang +6

We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc…

cond-mat.mtrl-sci2013★ 219 cited

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Z. Q. Liu, C. J. Li, W. M. Lü +10

The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interface…

cond-mat.str-el2013

Anisotropic Magneto Resistance and Planar Hall Effect at the LaAlO/SrTiO Heterointerfaces: Effect of Carrier Confinement on Magnetic Interactions

A. Annadi, Z. Huang, K. Gopinadhan +7

The confinement of the two dimensional electron gas (2DEG), preferential occupancy of the Ti 3d orbital and strong spin-orbit coupling at the LaAlO/SrTiO interface play a s…

cond-mat.mtrl-sci2013★ 20 cited

Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlattices

Z. Q. Liu, M. Yang, W. M. Lü +10

The electronic properties of SrRuO3/LaAlO3 (SRO/LAO) superlattices with different interlayer thicknesses of SRO layers were studied. As the thickness of SRO layers is reduced, the…

cond-mat.mes-hall2013★ 17 cited

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

A. Annadi, A. Putra, A. Srivastava +5

We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker…

cond-mat.supr-con2012★ 6 cited

Metallic state in La-doped YBaCuO thin films with -type charge carriers

S. W. Zeng, X. Wang, W. M. Lü +10

We report hole and electron doping in La-doped YBaCuO(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in o…

cond-mat.mtrl-sci2012★ 35 cited

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals

Z. Q. Liu, W. M. Lü, X. Wang +5

We report novel magnetotransport properties of the low temperature Fermi liquid in SrTiO3-x single crystals. The classical limit dominates the magnetotransport properties for a mag…

cond-mat.mtrl-sci2012★ 39 cited

Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals

Z. Q. Liu, W. M. Lu, S. L. Lim +8

The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3…

cond-mat.str-el2011★ 64 cited

Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality

X. Wang, W. M Lü, A. Annadi +4

Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (LAO/STO) interfaces is compared between samples prepared in high oxygen partial pressure (PO2) of 10-4 mbar exhibiting quasi-two…

cond-mat.mtrl-sci2011★ 24 cited

Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

Z. Q. Liu, D. P. Leusink, W. M. Lü +13

We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The swi…

cond-mat.mtrl-sci2010★ 24 cited

Nonlinear Insulator in Complex Oxides

Z. Q. Liu, D. P. Leusink, W. M. Lü +10

The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator…