Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

Abstract

We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

4 pages, 3 figures. To be appearing in Journal of Applied Physics

References in corpus (2)

• Magnetic effects at the interface between nonmagnetic oxides
• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State

Cited by in corpus (4)

• Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
• Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO${}_3$ embedded in GdTiO${}_3$
• Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces
• Emergent electronic landscapes in a novel valence-ordered nickelate with tri-component nickel coordination