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20102023
most citedField-effect tunneling transistor based on vertical graphene heterostructures

2.6k citations · 7.1k across the 9 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2014★ 255 cited

Graphene-protected copper and silver plasmonics

V. G. Kravets, R. Jalil, Y. -J. Kim +12

Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread…

cond-mat.mes-hall2013★ 117 cited

Doping Mechanisms in Graphene-MoS2 Hybrids

B. Sachs, L. Britnell, T. O. Wehling +6

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting sing…

cond-mat.mes-hall2013★ 298 cited

Interaction phenomena in graphene seen through quantum capacitance

G. L. Yu, R. Jalil, Branson Belle +12

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a nu…

cond-mat.mes-hall2012★ 1.8k cited

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Thanasis Georgiou, Rashid Jalil, Branson D. Belle +12

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the cre…

cond-mat.mes-hall2012★ 920 cited

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Liam Britnell, Roman V. Gorbachev, Rashid Jalil +12

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well…

cond-mat.mes-hall2011★ 2.6k cited

Field-effect tunneling transistor based on vertical graphene heterostructures

L. Britnell, R. V. Gorbachev, R. Jalil +10

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devi…