MOVPE growth of N-polar AlN on 4H-SiC: effect of substrate miscut on layer quality

J. Lemettinen, H. Okumura, I. Kim +3

We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-…