41 citations · 140 across the 11 of their papers we have counts for
11 papers
Burton-Cabrera-Frank theory for surfaces with alternating step types
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diff…
Crystal Truncation Rods from Miscut Surfaces with Alternating Terminations
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crysta…
Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
Guangxu Ju, Dongwei Xu, Carol Thompson +5
Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be expl…
In Situ Microbeam Surface X-ray Scattering Reveals Alternating Step Kinetics During Crystal Growth
Guangxu Ju, Dongwei Xu, Carol Thompson +5
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different g…
Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays
Guangxu Ju, Dongwei Xu, Matthew J. Highland +7
Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) usin…
Spontaneous Repairing Liquid Metal/Si Nanocomposite as a Smart Conductive-Additive-Free Anode for Lithium-ion Battery
Bing Han, Yu Yang, Xiaobo Shi +7
Silicon is a promising candidate for negative electrodes due to its high theoretical specific capacity (~3579 mAh g-1) and low lithiation potential (~0.40 V vs Li). However, its pr…
Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
Edith Perret, Dongwei Xu, M. J. Highland +5
Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase ep…
Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces
Dongwei Xu, Peter Zapol, G. Brian Stephenson +1
The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high…
Stacking and electric field effects on the electronic properties of the layered GaN
Dongwei Xu, Haiying He, Ravindra Pandey +1
Stability and electronic properties of atomic layers of GaN are investigated in the framework of the van der Waals-density functional theory. We find that the ground state of the l…
Disorder induced field effect transistor in bilayer and trilayer graphene
Dongwei Xu, Haiwen Liu, Vincent Sacksteder +4
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the co…
Phase Structure of the Topological Anderson Insulator
Dongwei Xu, Junjie Qi, Jie Liu +3
We study the disordered topological Anderson insulator in a 2-D (square not strip) geometry. We first report the phase diagram of finite systems and then study the evolution of pha…