activity
20122020
most citedDisorder induced field effect transistor in bilayer and trilayer graphene

4 citations · 4 across the 3 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2020

Crystal Truncation Rods from Miscut Surfaces with Alternating Terminations

Guangxu Ju, Dongwei Xu, Carol Thompson +5

Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crysta…

cond-mat.mtrl-sci2020

Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy

Guangxu Ju, Dongwei Xu, Carol Thompson +5

Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be expl…

cond-mat.mtrl-sci2020

In Situ Microbeam Surface X-ray Scattering Reveals Alternating Step Kinetics During Crystal Growth

Guangxu Ju, Dongwei Xu, Carol Thompson +5

The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different g…

cond-mat.mtrl-sci2018

Persistence of Island Arrangements During Layer-by-Layer Growth Revealed Using Coherent X-rays

Guangxu Ju, Dongwei Xu, Matthew J. Highland +7

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) usin…

physics.app-ph2018

Spontaneous Repairing Liquid Metal/Si Nanocomposite as a Smart Conductive-Additive-Free Anode for Lithium-ion Battery

Bing Han, Yu Yang, Xiaobo Shi +7

Silicon is a promising candidate for negative electrodes due to its high theoretical specific capacity (~3579 mAh g-1) and low lithiation potential (~0.40 V vs Li). However, its pr…

cond-mat.mes-hall2013

Stacking and electric field effects on the electronic properties of the layered GaN

Dongwei Xu, Haiying He, Ravindra Pandey +1

Stability and electronic properties of atomic layers of GaN are investigated in the framework of the van der Waals-density functional theory. We find that the ground state of the l…