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Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2
Weijie Zhao, R. M. Ribeiro, Minglin Toh +4
It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap mul…
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Weijie Zhao, Zohreh Ghorannevis, Amara Kiran Kumar +6
Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2)…
An innovative way of etching MoS2: Characterization and mechanistic investigation
Yuan Huang, Jing Wu, Xiangfan Xu +9
We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be…