Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi${}_x$As${}_{1-x}$/GaAs epilayers

Christopher A. Broderick, Simone Mazzucato, Hélène Carrère +9

The electron Landé g factor ($g^{\ast }$) is investigated both experimentally and theoretically in a series of GaBi${}_x$As${}_{1-x}$/GaAs strained epitaxial layers, for bismuth composit…