57 citations · 335 across the 14 of their papers we have counts for
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Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
Jörn Lange, Julian Becker, Eckhart Fretwurst +2
Charge multiplication (CM) in pn epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent flue…
Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors
Julian Becker, Klaus Gärtner, Robert Klanner +1
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in…
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields
Julian Becker, Eckhart Fretwurst, Robert Klanner
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility…