903 citations · 1.5k across the 19 of their papers we have counts for
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cond-mat.mes-hall2011★ 58 cited
Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
G. Yamahata, T. Kodera, H. O. H. Churchill +3
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage cu…
cond-mat.mes-hall2011★ 6 cited
Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
T. Ferrus, A. Rossi, W. Lin +3
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within…
cond-mat.mes-hall2011★ 7 cited
Detection of variable tunneling rates in silicon quantum dots
A. Rossi, T. Ferrus, W. Lin +3
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing…