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20132021
most citedPerformance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications

7 citations · 7 across the 3 of their papers we have counts for

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eess.SY2020

3D logic cells design and results based on Vertical NWFET technology including tied compact model

C. Mukherjee, M. Deng, F. Marc +7

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. Thi…