7 citations · 7 across the 3 of their papers we have counts for
3 papers
physics.app-ph2021★ 7 cited
Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications
Xin Wen, Akshay Arabhavi, Wei Quan +8
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technolo…
eess.SY2020
3D logic cells design and results based on Vertical NWFET technology including tied compact model
C. Mukherjee, M. Deng, F. Marc +7
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. Thi…
cond-mat.mes-hall2013
Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs
Mario Weiß, Amit Kumar Sahoo, Cristian Raya +4
This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~30…