85 citations · 109 across the 5 of their papers we have counts for
5 papers
Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors
Himadri Pandey, Jorge Daniel Aguirre Morales, Satender Kataria +6
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) g…
Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications
Xin Wen, Akshay Arabhavi, Wei Quan +8
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technolo…
A Comprehensive Graphene FET Model for Circuit Design
Saul Rodriguez, Sam Vaziri, Anderson Smith +4
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electron…
Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs
Mario Weiß, Amit Kumar Sahoo, Cristian Raya +4
This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~30…
Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation
Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiß +2
This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measu…