activity
19962023
most citedA simple and effective Verlet-type algorithm for simulating Langevin dynamics

284 citations · 3.1k across the 93 of their papers we have counts for

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physics.comp-ph2021★ 6 cited

Bringing discrete-time Langevin splitting methods into agreement with thermodynamics

Joshua Finkelstein, Chungho Cheng, Giacomo Fiorin +2

In light of the recently published complete set of statistically correct Gronbech-Jensen (GJ) methods for discrete-time thermodynamics, we revise a differential operator splitting…

physics.comp-ph2019★ 22 cited

Accurate Configurational and Kinetic Statistics in Discrete-Time Langevin Systems

Lucas Frese Grønbech Jensen, Niels Grønbech-Jensen

We expand on the previously published Grønbech-Jensen Farago (GJF) thermostat, which is a thermodynamically sound variation on the Størmer-Verlet algorithm for simulating discrete-…

physics.comp-ph2016★ 12 cited

The G-JF Thermostat for Accurate Configurational Sampling in Soft-Matter Simulations

Evyatar Arad, Oded Farago, Niels Grønbech-Jensen

We implement the statistically sound G-JF thermostat for Langevin Dynamics simulations into the ESPREesSo molecular package for large-scale simulations of soft matter systems. The…

physics.comp-ph2008★ 2 cited

Efficient Parallel Algorithm for Statistical Ion Track Simulations in Crystalline Materials

Byoungseon Jeon, Niels Grønbech-Jensen

We present an efficient parallel algorithm for statistical Molecular Dynamics simulations of ion tracks in solids. The method is based on the Rare Event Enhanced Domain following M…

physics.comp-ph2007★ 11 cited

Parallel TREE code for two-component ultracold plasma analysis

Byoungseon Jeon, Joel D. Kress, Lee A. Collins +1

The TREE method has been widely used for long-range interaction {\it N}-body problems. We have developed a parallel TREE code for two-component classical plasmas with open boundary…

physics.comp-ph1999★ 24 cited

Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model

D. Cai, C. M. Snell, K. M. Beardmore +1

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized int…