2 papers
cond-mat.mes-hall2026
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition
Yungyeong Park, Yosep Park, Hyeonseok Choi +3
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superi…
cond-mat.mtrl-sci2026
High-resolution neutron diffraction determination of noncollinear antiferromagnetic order in the honeycomb magnetoelectric FeNbO
Raktim Datta, Kapil Kumar, Dong Gun Oh +7
Magnetoelectric systems offer potential for device applications exploiting coupled states between electric and magnetic properties. Among magnetoelectric materials, \FNO has attrac…