3 papers
cond-mat.mtrl-sci2026
Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)
Zijin Lei, Yuze Wu, Christian Reichl +2
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interacti…
cond-mat.supr-con2025
An InAsSb surface quantum well with in-situ deposited Nb as a platform for semiconductor-superconductor hybrid devices
Sjoerd Telkamp, Zijin Lei, Tommaso Antonelli +7
We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Rela…
physics.app-ph2024
Improving Electrical Contact Quality and Extraordinary Magnetoresistance in High Mobility III-V Semiconductors
Thierry Désiré Pomar, Tristan Steegemans, Sreejith Kumar +8
Magnetometers based on the extraordinary magnetoresistance (EMR) effect are promising for applications which demand high sensitivity combined with room temperature operation but th…