40 citations · 61 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2014★ 21 cited
Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN
A. T. M. Golam Sarwar, Santino D. Carnevale, Thomas F. Kent +3
We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy.…
cond-mat.mtrl-sci2012★ 40 cited
Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon
S. D. Carnevale, C. Marginean, P. J. Phillips +4
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial…