1.2k citations · 3.4k across the 32 of their papers we have counts for
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cond-mat.mes-hall2009★ 13 cited
Gate-tunable bandgap in bilayer graphene
L. A. Falkovsky
The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or…
cond-mat.mes-hall2009★ 21 cited
Screening in gated bilayer graphene
L. A. Falkovsky
The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors o…
cond-mat.mtrl-sci2009★ 2 cited
InN dielectric function from the midinfrared to the visible range
L. A. Falkovsky
The dispersion of the dielectric function for wurtzite InN is analytically evaluated in the region near the fundamental energy gap. The real part of the dielectric function has a l…