activity
20052024
most citedRevealing the grain structure of graphene grown by chemical vapor deposition

74 citations · 75 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.supr-con2024

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Y. Baron, J. L. Lábár, S. Lequien +8

We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavi…

cond-mat.mtrl-sci2022

Statistical analysis of dislocation cells in uniaxially deformed copper single crystals

Sándor Lipcsei, Szilvia Kalácska, Péter Dusán Ispánovity +3

The dislocation microstructure developing during plastic deformation strongly influences the stress-strain properties of crystalline materials. The novel method of high resolution…

cond-mat.mes-hall2011★ 74 cited

Revealing the grain structure of graphene grown by chemical vapor deposition

Péter Nemes - Incze, Kwon Jae Yoo, Levente Tapasztó +5

The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we p…

cond-mat.mtrl-sci2006

Asymmetric intermixing in Pt/Ti

P. Süle, M. Menyhárd, L. Kótis +2

The ion-sputtering induced intermixing is studied by Monte-Carlo TRIM, molecular dynamics (MD) simulations, and Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/…

cond-mat.mtrl-sci2005★ 1 cited

Interface-anisotropy induced asymmetry of intermixing in bilayers

P. Süle, M. Menyhárd, L. Kótis +2

The ion-sputtering induced intermixing is studied by molecular dynamics (MD) simulations and by Auger electron spectroscopy depth profiling (AES-DP) analysis in Pt/Ti/Si substrate…