4 papers
Analysis of trap spectra in LEC and epitaxial GaAs
J. Vaitkus, E. Gaubas, V. Kazukauskas +5
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI…
X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector
C. Schwarz, M. Campbell, R. Goeppert +11
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-ch…
Preliminary Results for LP VPE X-Ray Detectors
R. Adams, R. Bates, C. Da Via +5
Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for…
Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
R. L. Bates, C. Da'Via, V. O'Shea +3
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a ~cm…