Analysis of trap spectra in LEC and epitaxial GaAs
arXiv:hep-ex/9911048 · doi:10.1016/S0168-9002(99)00433-7
Abstract
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.
Invited talk, 6-th Workshop on Gallium Arsenide and Related Compounds June 22-26, 1998 Praha-Pruhonice, Czech Republic