8 papers
Single electron transistors with high quality superconducting niobium islands
R. Dolata, H. Scherer, A. B. Zorin +1
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consist…
The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors
H. Scherer, Th. Weimann, A. B. Zorin +1
The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming…
Metallic single-electron transistor without traditional tunnel barriers
V. A. Krupenin, A. B. Zorin, D. E. Presnov +2
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electr…
The single electron R-pump: first experiment
S. V. Lotkhov, S. A. Bogoslovsky, A. B. Zorin +1
We fabricated and tested the single electron R-pump, i.e. a three-junction Al circuit with on-chip Cr resistors. We show that due to the presence of the resistors (R > h/e^2 = 25.8…
Aluminum Single Electron Transistors with Islands Isolated from a Substrate
V. A. Krupenin, D. E. Presnov, A. B. Zorin +1
The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the c…
Storage capabilities of a 4-junction single electron trap with an on-chip resistor
S. V. Lotkhov, H. Zangerle, A. B. Zorin +1
We report on the operation of a single electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a m…