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physics.app-ph2024★ 1 cited
Competing mechanisms of dominant radiative and Auger recombination in hot carrier generation in III-V semiconductor nanowires
Hamidreza Esmaielpour, Paul Schmiedeke, Nabi Isaev +4
One-dimensional structures such as nanowires (NWs) show great promise in tailoring the rates of hot carrier thermalization in semiconductors with important implications for the des…
physics.app-ph2024★ 99 cited
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
G. Koblmüller, S. Fernández-Garrido, E. Calleja +1
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…