106 citations · 208 across the 6 of their papers we have counts for
6 papers
Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
Hyowon W. Jeong, Aris Koulas-Simos, Imad Limame +6
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scal…
Lasing from SOI-integrated GaAsSb nanowires via resonator-driven optical feedback
J. Zöllner, C. Doganlar, C. García Marcilla +3
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical impleme…
Unveiling the growth mode diagram of GaSe on sapphire
M. Bissolo, M. Dembecki, J. Belz +10
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technol…
Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires
Hamidreza Esmaielpour, Nabi Isaev, Jonathan J. Finley +1
Understanding the origin of hot carrier relaxation in nanowires (NWs) with one-dimensional (1D) geometry is significant for designing efficient hot carrier solar cells with such na…
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
G. Koblmüller, S. Fernández-Garrido, E. Calleja +1
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffracti…
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
S. Fernández-Garrido, G. Koblmüller, E. Calleja +1
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN deco…