most citedVan der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

205 citations · 205 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2010★ 205 cited

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

H. D. Li, Z. Y. Wang, X. Kan +7

Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality…