most citedUnusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

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cond-mat.mes-hall2010★ 118 cited

Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

X. Hong, J. Hoffman, A. Posadas +3

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectr…