A. Posadas

most citedHigh-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

221 citations · 445 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.str-el2015★ 3 cited

Final-state effect on x-ray photoelectron spectrum of nominally $d^{1}$ and $n$ -doped $d^{0}$ transition metal oxides

Chungwei Lin, Agham Posadas, Tobias Hadamek +1

We investigate the x-ray photoelectron spectroscopy (XPS) of nominally $d^{1}$ and $n$ -doped $d^{0}$ transition metal oxides including NbO $_{2}$ , SrVO $_{3}$ , and LaTiO $_{3}$ (nominally $d^{1}$ …

cond-mat.mes-hall2008★ 221 cited

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

X. Hong, A. Posadas, K. Zou +2

Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band stru…

cond-mat.mes-hall2008★ 221 cited

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

X. Hong, A. Posadas, K. Zou +2

The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (…

Final-state effect on x-ray photoelectron spectrum of nominally d1 and n-doped d0 transition metal oxides

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

Final-state effect on x-ray photoelectron spectrum of nominally $d^{1}$ and $n$ -doped $d^{0}$ transition metal oxides