activity
20052026
most citedHigh-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

221 citations · 590 across the 8 of their papers we have counts for

collaborators

8 papers

physics.optics2026

Hybrid BaTiO3/TiO2 Metasurface for Efficient Gigahertz-Speed Free-Space Electro-Optic Modulation

Zhongpeng Sun, Kerolos M. A. Yousef, Michael Domm +13

Free-space electro-optic modulators are key to emerging photonic systems, yet their performance remains limited by trade-offs between modulation efficiency, bandwidth, and device a…

eess.SP2026

High Coupling Tunable Acoustic Resonators in Monolithic Barium Titanate

Ian Anderson, Agham Posadas, Alexander A. Demkov +1

The growing number of wireless communication bands has driven demand for compact, low-loss, and frequency adjustable RF filtering. Tunable acoustic resonators are well suited to ad…

eess.SY2026

Tunable Ferroelectric Acoustic Resonators in Monolithic Thin-Film Barium Titanate

Ian Anderson, Agham Posadas, Alexander A. Demkov +1

The increasing development of wireless communication bands has motivated the development of compact, low-loss, and frequency adjustable RF filtering technologies. Acoustic resonato…

cond-mat.str-el2015★ 3 cited

Final-state effect on x-ray photoelectron spectrum of nominally and -doped transition metal oxides

Chungwei Lin, Agham Posadas, Tobias Hadamek +1

We investigate the x-ray photoelectron spectroscopy (XPS) of nominally and -doped transition metal oxides including NbO, SrVO, and LaTiO (nominally …

cond-mat.mtrl-sci2008★ 75 cited

Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

C. A. F. Vaz, J. Hoffman, A. -B. Posadas +1

Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuiti…

cond-mat.mes-hall2008★ 221 cited

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

X. Hong, A. Posadas, K. Zou +2

Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band stru…