Shoichiro Saito

most citedFirst-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO

_{2}

Interfaces

35 citations · 50 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2010★ 8 cited

New structural model for GeO2/Ge interface: A first-principles study

Shoichiro Saito, Tomoya Ono

First-principles modeling of a GeO2/Ge(001) interface reveals that sixfold GeO2, which is derived from cristobalite and is different from rutile, dramatically reduces the lattice m…

cond-mat.mtrl-sci2010★ 7 cited

First-Principles Study on Structural Properties of GeO $_{2}$ and SiO $_{2}$ under Compression and Expansion Pressure

Shoichiro Saito, Tomoya Ono

The detailed analysis of the structural variations of three GeO $_{2}$ and SiO $_{2}$ polymorphs ( $α$ -quartz, $α$ -cristobalite, and rutile) under compression and expansion pressure is re…

cond-mat.mtrl-sci2009

First-principles electronic-structure calculation of dangling bonds at Si/SiO $_{2}$ and Ge/GeO $_{2}$ interfaces

Tomoya Ono, Shoichiro Saito

Evidence of the absence of the clear electron spin-resonance signal from Ge dangling bonds (DBs) at Ge/GeO $_{2}$ interfaces is explored by means of first-principles electronic-struct…

cond-mat.mtrl-sci2009★ 35 cited

First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO $_{2}$ Interfaces

Shoichiro Saito, Takuji Hosoi, Heiji Watanabe +1

We present the evidence of the low defect density at Ge/GeO $_{2}$ interfaces in terms of first-principles total energy calculations. The energy advantages of the atom emission from t…

New structural model for GeO2/Ge interface: A first-principles study

First-Principles Study on Structural Properties of GeO2​ and SiO2​ under Compression and Expansion Pressure

First-principles electronic-structure calculation of dangling bonds at Si/SiO2​ and Ge/GeO2​ interfaces

First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO2​ Interfaces

First-Principles Study on Structural Properties of GeO $_{2}$ and SiO $_{2}$ under Compression and Expansion Pressure

First-principles electronic-structure calculation of dangling bonds at Si/SiO $_{2}$ and Ge/GeO $_{2}$ interfaces

First-Principles Study for Evidence of Low Interface Defect Density at Ge/GeO $_{2}$ Interfaces