59 citations · 116 across the 3 of their papers we have counts for
3 papers
Defect evolution and interplay in n-type InN
Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente +5
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron an…
Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: a case study of InN
Christian Rauch, Ilja Makkonen, Filip Tuomisto
We present a comprehensive study of vacancy and vacancy-impurity complexes in InN combining positron annihilation spectroscopy and ab-initio calculations. Positron densities and an…
Tracking defect-induced ferromagnetism in GaN:Gd
Martin Roever, Joerg Malindretos, Amilcar Bedoya-Pinto +3
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy (MBE). A poor reproducibility with respect to the magnetic properties is found in these sample…