Tracking defect-induced ferromagnetism in GaN:Gd

Abstract

We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy (MBE). A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10^19 cm^-3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support the suggested connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen co-doping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd doped GaN.

References in corpus (1)

• GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K

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• A Simplified Method of the Assessment of Magnetic Anisotropy of Commonly Used Sapphire Substrates in SQUID Magnetometers
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• Magnetically active vacancy related defects in irradiated GaN layers
• Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses