63 citations · 150 across the 4 of their papers we have counts for
4 papers
Engineering Nanowire n-MOSFETs at Lg < 8 nm
Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis +3
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major perfo…
Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors
SungGeun Kim, Mathieu Luisier, Timothy B. Boykin +1
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS)…
Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
SungGeun Kim, Abhijeet Paul, Mathieu Luisier +2
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum…
On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias
Neophytos Neophytou, Sung Geun Kim, Gerhard Klimeck +1
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretic…