R. Keller

most citedEpitaxial (111) Films of Cu, Ni, and Cu

_{x} N i

o n α - A l

O

_3$(0001) for Graphene Growth by Chemical Vapor Deposition

57 citations · 57 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2013

Giant Secondary Grain Growth in Cu Films on Sapphire

David L. Miller, Mark W. Keller, Justin M. Shaw +3

Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The…

cond-mat.mtrl-sci2012★ 57 cited

Epitaxial (111) Films of Cu, Ni, and Cu $_{x} N i$ _y $o n α - A l$ _2 $O$ _3$(0001) for Graphene Growth by Chemical Vapor Deposition

David L. Miller, Mark W. Keller, Justin M. Shaw +2

Films of (111)-textured Cu, Ni, and Cu $_{x}$ Ni $_{y}$ were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a…

Giant Secondary Grain Growth in Cu Films on Sapphire

Epitaxial (111) Films of Cu, Ni, and Cux​Ni_yonα−Al_2O_3$(0001) for Graphene Growth by Chemical Vapor Deposition

Epitaxial (111) Films of Cu, Ni, and Cu $_{x} N i$ _y $o n α - A l$ _2 $O$ _3$(0001) for Graphene Growth by Chemical Vapor Deposition